Application note from ON Semiconductors discussing possible abnormalities on High voltage gate driver when operating on short pulses. Link here (PDF)
The High−Voltage Integrated Circuit (HVIC) gate driver family is designed to drive an N−channel MOSFET or IGBT up to 600 V. One of the most common methods to supply power to the high−side gate drive circuitry of the high−voltage gate drive IC is the bootstrap power supply. This bootstrap power supply technique has the advantage of being simple and low cost. However, duty cycle is limited by the requirement to charge the bootstrap capacitor and serious problems occur when extremely short pulse width is used in the application system. This application note explains the features of HVIC gate drivers and provides recommendations to avoid short pulse−width issues in the application.
App note from ON semiconductors about repurposing a buck converter to produce negative voltages. Link here (PDF)
Applications in the electronics industry ranging from sensor−based designs to power amplifiers are periodically faced with the requirement to generate a negative voltage rail. Although many transformer−based designs, charge pumps and other methods have been used to meet such a requirement, the inverting buck−boost topology stands out as simple to design and can save on power and board space too.
With power budgets in many applications already stretched, and PCB real estate limited due to the high levels of functionality incorporated in many new products, power devices that use an inverting buck−boost topology can prove extremely valuable to systems designers.
A Buck regulator can be reconfigured to generate a negative output voltage from a positive input voltage using the inverting buck−boost topology. Unlike a buck regulator, the Inverting buck−boost transfers energy to the output through the output diode during the ’Off’ time. For this reason, users must keep in mind that the average output current is always less than the average inductor current.
Smart-FETs application from ON Semiconductors. Link here (PDF)
This application note describes the structure and design philosophy of ON Semiconductor High Side Smart−FETs, and serves as a guide to understand the operation of the device in specific applications. The scope of this document is limited to Smart−FETs with analog current sense output.
FAQs answered by ON Semiconductor’s application support team on the topic of current sense amplifiers. Link here (PDF)
App note from ON Semiconductors about SiPM sensors, explaining the working principle and primary performance parameters. Link here (PDF)
The Silicon Photomultiplier (SiPM) is a sensor that addresses the challenge of sensing, timing and quantifying low-light signals down to the single-photon level. Traditionally the province of the Photomultiplier Tube (PMT), the Silicon Photomultiplier now offers a highly attractive alternative that combines the low-light detection capabilities of the PMT while offering all the benefits of a solid-state sensor. The SiPM features low-voltage operation, insensitivity to magnetic fields, mechanical robustness and excellent uniformity of response. Due to these traits, the SensL® SiPM has rapidly gained a proven performance in the fields of medical imaging, hazard and threat detection, biophotonics, high energy physics and LiDAR.
Introducing the eye diagram method in this app note from ON Semiconductors in determining signal integrity of USB lines. Link here (PDF)
The Universal Serial Bus (USB) has become a popular feature of PCs, cell phones and other electronic devices. USB makes data transfer between electronic devices faster and easier. USB 2.0 transfers data at up to 480 Mbps. At these data rates, any small amount of capacitance added will cause disturbances to the data signals. Designers are left with the challenge of finding ESD protection solutions that can protect these sensitive lines without adding signal degrading capacitance. This document will discuss USB 2.0 and evaluate the importance of low capacitance ESD protection devices with the use of eye diagrams.
Integrated fault protected MOSFET app note from ON Semiconductors. Link here (PDF)
The ever increasing density and complexity of automotive and industrial control electronics requires integration of components, wherever possible, so as to conserve space, reduce cost, and improve reliability. Integration of protection features with power switches continues to drive new product development. The often open environments of automotive and industrial electronics, subject to severe voltage transients, high power and high inductance loads, numerous external connections, and human intervention force the requirement of fault protection circuitry. Advancements in power MOSFET processing technology afford an economical marriage of protection features, such as current limitation, and standard MOSFET power transistor switches. This paper describes the technology and operation of ON Semiconductor’s HDPlus monolithic low-side smart MOSFET family.
App note from ON semiconductors about time delay on start up in conjunction with eFuse to compensate voltage spikes that can falsely trigger them. Link here (PDF)
The eFuse protection devices are used for limiting the system load current in the event of an overload or a short circuit. Many applications employ ON Semiconductor eFuses at the power input stage of the system between the main power input connector and DC−DC converters or power regulators. Such applications often tend to experience a voltage spikes and transients during a hot-plug events, especially when the long cables are used at the power input.
Although ON Semiconductor eFuses are extremely immune to voltage transients and eFuses with the Overvoltage clamp feature provide a fast response when limiting the output voltage during transients, sometimes various applications require a time delay between the hot-plug input voltage application and enabling of the eFuse in order for the input voltage to be stabilized before turning on the eFuse.
App note discussing extended features of NCP12600, NCP12600 is a multi-mode controller for offline power supplies by ON Semiconductor. Link here (PDF)
Beside the novel multi−mode structure it embarks, the NCP12600 packs a lot of features such as an efficient short−circuit protection architecture, a start−up sequence with a slow switching frequency ramp−up, a fast reset when latched and an auto−recovery scheme when line cycle dropout occurs in latched versions. Let’s discover these novelties in the present application note.
App note from ON Semiconductors about Silicon Carbide MOSFETs, their difference and gains over Silicon MOSFETs. Link here (PDF)
Among the Wide Band Gap materials silicon carbide (SiC) is by far the most mature one. The raw wafer quality has greatly improved over the last years with significant reduction of micro pipes and dislocations. Silicon carbide devices can work at high temperatures, are very robust and offer both low conduction and switching losses. The high thermal conductivity makes SiC also a perfect choice for high power applications, when good cooling is required. Compared to silicon switches, silicon carbide MOSFETs inherit some specific characteristics like the shift of gate threshold a designer should be aware of. This effect will be explained in this application note.