App note: Linear power MOSFETS basic and applications


Some examples of power MOSFETS application from this app note from IXYS Corporation. Link here (PDF)

Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability and extended Forward Bias Safe Operating Area (FBSOA) characteristics. Such mode of operation differs from the usual way of using Power MOSFET, in which it functions like an “on-off switch” in switched-mode applications. In linear mode, the Power MOSFET is subjected to high thermal stress due to the simultaneous occurrence of high drain voltage and current resulting in high power dissipation. When the thermo-electrical stress exceeds some critical limit, thermal hot spots occur in the silicon causing the device to fail

App note: Depletion-Mode power MOSFETs and applications


IXYS Corporation’s N-Channel power MOSFET selection and application. Link here (PDF)

Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero (VGS=0V). This paper will describe IXYS latest N-Channel Depletion power MOSFETs and their application advantages to help designers to select these devices in many industrial applications.

App note: Choosing the appropriate component from data sheet ratings & characteristics.


Chossing the right power semiconductor for an application, a technical note from IXYS. Link here

This application note is intended to show how to choose the appropriate rating of a power semiconductor component for a known application using the specifications given in the datasheet. The explanations have been kept sufficiently general to be applicable to all common power circuits. However, for the sake of concreteness, they focus on IXYS IGBT modules and discretes respectively with or without diode. Proceeding as described in the following enables the designer to gain all necessary information from the data sheets for the most economic selection of power semiconductors.